BLF6G20-45 NXP Semiconductors, BLF6G20-45 Datasheet

RF MOSFET Small Signal LDMOS TNS

BLF6G20-45

Manufacturer Part Number
BLF6G20-45
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G20-45

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
13 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
CDFM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G20-45,112

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Company
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Manufacturer
Quantity
Price
Part Number:
BLF6G20-45
Manufacturer:
AOS
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Part Number:
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Manufacturer:
NXP
Quantity:
1 000
Part Number:
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Manufacturer:
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Quantity:
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1. Product profile
CAUTION
1.1 General description
1.2 Features
45 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
RF performance at T
[1]
I
I
I
I
I
I
I
I
I
Mode of operation
2-carrier W-CDMA
BLF6G20-45; BLF6G20S-45
Power LDMOS transistor
Rev. 02 — 25 August 2008
Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz,
a supply voltage of 28 V and an I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1800 MHz to 2000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
N
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 2.5 W
Power gain = 19.2 dB (typ)
Efficiency = 14 %
ACPR = 50 dBc
Typical performance
case
= 25 C in a common source class-AB production test circuit.
f
(MHz)
1805 to 1880
Dq
of 360 mA:
V
(V)
28
DS
P
(W)
2.5
L(AV)
G
(dB)
19.2
p
Product data sheet
(%)
14
D
ACPR
(dBc)
50
[1]

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BLF6G20-45 Summary of contents

Page 1

... BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 02 — 25 August 2008 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...

Page 2

... NXP Semiconductors 1.3 Applications I RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range. 2. Pinning information Table 2. Pin BLF6G20-45 (SOT608A BLF6G20S-45 (SOT608B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G20-45 BLF6G20S-45 4. Limiting values Table 4 ...

Page 3

... RF performance at V class-AB production test circuit. Symbol ACPR 7.1 Ruggedness in class-AB operation The BLF6G20-45 and BLF6G20S-45 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF6G20-45_BLF6G20S-45_2 Product data sheet BLF6G20-45; BLF6G20S-45 Thermal characteristics Parameter thermal resistance from junction to case ...

Page 4

... 360 mA 1842 MHz Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values (dB 360 mA MHz. Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values BLF6G20-45_BLF6G20S-45_2 Product data sheet BLF6G20-45; BLF6G20S- (dB 001aah546 60 IMD D (%) (dBc (W) L(PEP) = 1843 MHz ...

Page 5

... W-CDMA power gain and drain efficiency as functions of average load power; typical values 8. Test information input 50 See Table 8 for list of components. Fig 6. Test circuit for operation at 1805 MHz and 1880 MHz BLF6G20-45_BLF6G20S-45_2 Product data sheet BLF6G20-45; BLF6G20S-45 001aah548 50 D ACPR (%) (dBc ...

Page 6

... Striplines are on a double copper-clad Rogers Duroid 5880 Printed-Circuit Board (PCB) ( See Table 8 for list of components. Fig 7. Component layout for 1805 MHz and 1880 MHz test circuit BLF6G20-45_BLF6G20S-45_2 Product data sheet BLF6G20-45; BLF6G20S- Rev. 02 — 25 August 2008 Power LDMOS transistor C14 C13 C8 C10 ...

Page 7

... R1 Philips chip resistor [1] American technical ceramics type 100B or capacitor of same quality. [2] American technical ceramics type 100A or capacitor of same quality. BLF6G20-45_BLF6G20S-45_2 Product data sheet BLF6G20-45; BLF6G20S-45 7. Rev. 02 — 25 August 2008 Power LDMOS transistor Value Remarks [1] 0.7 pF [1] 3 ...

Page 8

... UNIT 7.24 4.62 0.15 10.21 mm 6.99 3.76 0.10 10.01 0.182 0.285 0.402 0.006 inches 0.148 0.275 0.394 0.004 OUTLINE VERSION IEC SOT608A Fig 8. Package outline SOT608A BLF6G20-45_BLF6G20S-45_2 Product data sheet BLF6G20-45; BLF6G20S- scale 10.29 10.21 10.29 1.14 15.75 3.30 2.92 10.03 10 ...

Page 9

... DIMENSIONS (mm dimensions are derived from the original inch dimensions) UNIT 4.62 7.24 0.15 10.21 mm 3.76 6.99 0.10 10.01 0.182 0.285 0.006 0.402 inch 0.148 0.275 0.004 0.394 OUTLINE VERSION IEC SOT608B Fig 9. Package outline SOT608B BLF6G20-45_BLF6G20S-45_2 Product data sheet BLF6G20-45; BLF6G20S- scale 10.29 10.21 10.29 1.14 15.75 1 ...

Page 10

... NXP semiconductors. • Legal texts have been adapted to the new company name where appropriate. • The document now describes both the eared and earless version of this product: BLF6G20-45 and BLF6G20S-45 respectively. 20060220 Objective data sheet - Rev. 02 — 25 August 2008 Power LDMOS transistor ...

Page 11

... For more information, please visit: For sales office addresses, please send an email to: BLF6G20-45_BLF6G20S-45_2 Product data sheet BLF6G20-45; BLF6G20S-45 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 12

... NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G20-45_BLF6G20S-45_2 Power LDMOS transistor All rights reserved. Date of release: 25 August 2008 ...

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