BLF6G20-110 NXP Semiconductors, BLF6G20-110 Datasheet
BLF6G20-110
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BLF6G20-110 Summary of contents
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... BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 — 13 January 2009 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz ...
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... NXP Semiconductors 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning information Table 2. Pin BLF6G20-110 (SOT502A BLF6G20LS-110 (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number ...
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... RF performance at V class-AB production test circuit. Symbol P L(AV IMD3 ACPR 7.1 Ruggedness in class-AB operation The BLF6G20-110 and BLF6G20LS-110 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF6G20-110_BLF6G20LS-110_3 Product data sheet BLF6G20-110; BLF6G20LS-110 Thermal characteristics Parameter Conditions ...
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... G p (dB 1400 mA 1960 MHz Fig 2. Two-tone CW power gain and drain efficiency as function of peak envelope load power; typical values BLF6G20-110_BLF6G20LS-110_3 Product data sheet BLF6G20-110; BLF6G20LS-110 (dB 1400 mA 1960 MHz One-tone CW power gain and drain efficiency as function of load power; typical values 001aaj073 60 D IMD3 ...
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... BLF6G20-110 or BLF6G20LS-110 SMD resistor SMD resistor Rev. 03 — 13 January 2009 Power LDMOS transistor C3 C10 ...
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... D UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502A Fig 5. Package outline SOT502A BLF6G20-110_BLF6G20LS-110_3 Product data sheet BLF6G20-110; BLF6G20LS-110 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...
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... UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502B Fig 6. Package outline SOT502B BLF6G20-110_BLF6G20LS-110_3 Product data sheet BLF6G20-110; BLF6G20LS-110 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...
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... Revision history Document ID BLF6G20-110_BLF6G20LS-110_3 20090113 Modifications: BLF6G20-110_BLF6G20LS-110_2 20081117 BLF6G20-110_BLF6G20LS-110_1 20080128 BLF6G20-110_BLF6G20LS-110_3 Product data sheet BLF6G20-110; BLF6G20LS-110 Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution ...
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... For more information, please visit: For sales office addresses, please send an email to: BLF6G20-110_BLF6G20LS-110_3 Product data sheet BLF6G20-110; BLF6G20LS-110 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 13 January 2009 Document identifier: BLF6G20-110_BLF6G20LS-110_3 ...