BLF6G22-45 NXP Semiconductors, BLF6G22-45 Datasheet - Page 7
![RF MOSFET Power LDMOS TNS](/photos/41/59/415993/sot608a_3d_sml.gif)
BLF6G22-45
Manufacturer Part Number
BLF6G22-45
Description
RF MOSFET Power LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G22-45112.pdf
(10 pages)
Specifications of BLF6G22-45
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.2 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 225 C
Package / Case
SOT-608-3
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
2.5W(Typ)
Power Gain (typ)@vds
18.5@28VdB
Frequency (min)
2GHz
Frequency (max)
2.2GHz
Package Type
CDFM
Pin Count
3
Forward Transconductance (typ)
5S
Drain Source Resistance (max)
200(Typ)@6.15Vmohm
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
13%
Mounting
Screw
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G22-45,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF6G22-45
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
9. Package outline
Fig 8.
BLF6G22-45_2
Product data sheet
Flanged ceramic package; 2 mounting holes; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
Package outline SOT608A
VERSION
OUTLINE
SOT608A
0.182
0.148
4.62
3.76
A
H
0.285
0.275
7.24
6.99
b
U 2
A
A
0.006
0.004
0.15
0.10
c
IEC
10.21
10.01
0.402
0.394
D
10.29
10.03
0.405
0.395
D 1
10.21
10.01
0.402
0.394
JEDEC
E
U 1
D 1
D
q
b
10.29
10.03
0.405
0.395
REFERENCES
E 1
1
2
Rev. 02 — 21 April 2008
3
0
0.045
0.035
1.14
0.89
F
w 2
15.75
14.73
0.620
0.580
EIAJ
H
scale
M
5
C
C
0.130
0.115
3.30
2.92
M
p
F
B
p
10 mm
0.067
0.053
1.70
1.35
Q
w 1
15.24
0.600
M
q
A
M
20.45
20.19
0.805
0.795
U 1
B
M
PROJECTION
0.390
0.380
EUROPEAN
9.91
9.65
U 2
E 1
Power LDMOS transistor
BLF6G22-45
0.010 0.020
0.25
w 1
c
Q
0.51
w 2
© NXP B.V. 2008. All rights reserved.
ISSUE DATE
01-02-22
02-02-11
E
SOT608A
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