BLF6G10-45 NXP Semiconductors, BLF6G10-45 Datasheet
BLF6G10-45
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BLF6G10-45 Summary of contents
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... BLF6G10-45 Power LDMOS transistor Rev. 02 — 20 January 2010 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz ...
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... Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Thermal characteristics Parameter thermal resistance from junction to case Rev. 02 — 20 January 2010 BLF6G10-45 Power LDMOS transistor Simplified outline Symbol 1 [ Min - −0.5 - −65 - ...
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... RF performance at V class-AB production test circuit. Symbol η D ACPR 7.1 Ruggedness in class-AB operation The BLF6G10-45 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 350 mA BLF6G10-45_2 Product data sheet Characteristics C per section; unless otherwise specified. drain-source breakdown voltage ...
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... BLF6G10-45_2 Product data sheet (dB 001aah528 70 η D (%) IMD η (dBc − (W) L (PEP) = 960 MHz; 1 Fig 3. Rev. 02 — 20 January 2010 BLF6G10-45 Power LDMOS transistor 001aah527 75 η D (%) η ( −30 −60 − 350 mA 960 MHz 960.1 MHz. 2 Intermodulation distortion as a function of peak envelope load power; typical values ...
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... BLF6G10-45_2 Product data sheet 001aah530 16 η D (%) 12 (1) ( (dBm) L(AV) = 952.5 MHz; 1 Fig 5. Rev. 02 — 20 January 2010 BLF6G10-45 Power LDMOS transistor −40 ACPR (dBc) −45 (1) (2) −50 −55 − 350 mA 952.5 MHz 957.5 MHz; carrier spacing 5 MHz 955 MHz ...
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V GG C10 input 50 Ω Fig 6. Test circuit for operation at 900 MHz C9 C11 C12 C13 C14 C15 C16 R2 F1 output C7 50 Ω 001aah532 ...
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... Figure 7). Value 3 6 1.0 pF 6 330 nF 4.5 μ 220 μ 4.7 Ω; 0.1 W 6.8 Ω; 0.1 W Rev. 02 — 20 January 2010 BLF6G10-45 Power LDMOS transistor − C16 C15 C14 C6 C7 001aah533 = 3.5 and thickness = 0.76 mm. r Remarks [1] [1] [1] [1] [1] [1] ...
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... REFERENCES JEDEC EIAJ Rev. 02 — 20 January 2010 BLF6G10-45 Power LDMOS transistor 1.70 20.45 9.91 15.24 0.25 0.51 1 ...
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... MHz from 800 MHz. lower frequency range extended to 700 MHz from 800 MHz. export control disclaimer added. Product data sheet Rev. 02 — 20 January 2010 BLF6G10-45 Power LDMOS transistor Change notice Supersedes - BLF6G10-45_1 - - © NXP B.V. 2010. All rights reserved ...
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... Export might require a prior authorization from national authorities. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 20 January 2010 BLF6G10-45 Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 20 January 2010 Document identifier: BLF6G10-45_2 ...