BLF6G10-45 NXP Semiconductors, BLF6G10-45 Datasheet - Page 2

• Manufacturer Part Number: BLF6G10-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G10-45,112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G10-45_2
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLF6G10-45
Symbol
V
V
I
T
Symbol
R
T
D
stg
j
DS
GS
th(j-case)
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
700 MHz to 1000 MHz frequency range.
Connected to flange.
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Parameter
thermal resistance from junction
to case
drain
gate
source
Description
Package
Name
-
Rev. 02 — 20 January 2010
Description
flanged ceramic package; 2 mounting holes; 2 leads
Conditions
Conditions
T
P
case
L
[1]
= 12.5 W
Simplified outline
= 80 °C;
1
2
Power LDMOS transistor
BLF6G10-45
3
Symbol
Typ
1.7
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
2
Max
65
+13
13
+150
225
sym112
Version
SOT608A
Unit
K/W
1
3
2 of 11
Unit
V
V
A
°C
°C