BF1206 NXP Semiconductors, BF1206 Datasheet - Page 11

• Manufacturer Part Number: BF1206
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1206

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1206,115

NXP Semiconductors
Amplifier a scattering parameters
V
Noise data
V
2003 Nov 17
(MHz)
DS
DS
1000
100
200
300
400
500
600
700
800
900
Dual N-channel dual-gate MOS-FET
50
f
= 5 V; V
= 5 V; V
(MHz)
MAGNITUDE
400
800
f
G2-S
G2-S
(ratio)
0.988
0.984
0.971
0.951
0.926
0.896
0.865
0.832
0.797
0.769
0.732
= 4 V; I
= 4 V; I
s
11
D
D
= 18 mA; T
= 18 mA; T
ANGLE
18.33
27.32
36.04
44.50
52.63
60.47
67.66
75.01
81.73
4.62
9.23
(deg)
amb
amb
(dB)
F
MAGNITUDE
1.3
1.6
min
= 25 C
= 25 C
(ratio)
3.72
3.71
3.66
3.58
3.47
3.36
3.23
3.09
2.91
2.83
2.67
s
21
ANGLE
174.72
169.42
159.05
148.77
138.74
129.05
119.67
110.43
101.40
(deg)
93.09
84.05
11
(ratio)
0.618
0.593
MAGNITUDE
0.0008
0.0015
0.0029
0.0038
0.0044
0.0046
0.0043
0.0038
0.0028
0.0051
0.0071
(ratio)

opt
s
12
ANGLE
146.61
159.78
118.47
86.73
84.39
79.96
76.62
74.42
74.84
79.73
92.63
(deg)
(deg)
22.7
44.1
MAGNITUDE
(ratio)
0.991
0.989
0.986
0.980
0.973
0.965
0.958
0.951
0.937
0.940
0.937
Product specification
s
BF1206
22
26.7
29.7
()
R
n
ANGLE
12.32
16.33
20.25
24.20
28.14
32.14
35.76
39.86
(deg)
2.07
4.16
8.24