BF1206 NXP Semiconductors, BF1206 Datasheet - Page 19

• Manufacturer Part Number: BF1206
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1206

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1206,115

NXP Semiconductors
PACKAGE OUTLINE
2003 Nov 17
Plastic surface-mounted package; 6 leads
Dual N-channel dual-gate MOS-FET
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
6
1
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
5
2
2.2
1.8
b p
D
JEDEC
1.35
1.15
E
4
3
REFERENCES
0
1.3
e
w
B
M
B
0.65
e
1
SC-88
JEITA
scale
19
1
H E
2.2
2.0
A
0.45
0.15
L p
A 1
2 mm
0.25
0.15
Q
H E
E
0.2
v
detail X
PROJECTION
0.2
EUROPEAN
w
L p
Q
0.1
y
A
c
Product specification
X
v
ISSUE DATE
M
04-11-08
06-03-16
BF1206
A
SOT363