BAV99,215 NXP Semiconductors, BAV99,215 Datasheet - Page 4

• Manufacturer Part Number: BAV99,215
• Description: DIODE SW DBL 75V 215MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAV99,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 0.215A
• Rev Curr: 0.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Package Type: TO-236AB
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1624-2; 933215370215; BAV99 T/R

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAV99_SER
Product data sheet
Table 7.
[1]
[2]
[3]
Table 8.
T
[1]
[2]
Symbol
R
R
Symbol
Per diode
V
I
C
t
V
R
rr
amb
F
FR
th(j-a)
th(j-sp)
d
Single diode loaded.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Soldering points at pins 2, 3, 5 and 6.
When switched from I
When switched from I
= 25
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
BAV99
BAV99W
BAV99
BAV99S
BAV99W
All information provided in this document is subject to legal disclaimers.
F
F
Rev. 8 — 18 November 2010
= 10 mA to I
= 10 mA; t
r
= 20 ns.
R
= 10 mA; R
I
f = 1 MHz; V
Conditions
I
I
I
V
V
V
V
F
F
F
F
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 25 V
= 80 V
= 25 V; T
= 80 V; T
Conditions
in free air
L
= 100 Ω; measured at I
j
j
R
= 150 °C
= 150 °C
= 0 V
[1][2]
High-speed switching diodes
[3]
[1]
[2]
BAV99 series
Min
-
-
-
-
-
Min
-
-
-
-
-
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
500
625
360
260
300
Max
715
855
1
1.25
30
0.5
30
50
1.5
4
1.75
Unit
K/W
K/W
K/W
K/W
K/W
Unit
mV
mV
V
V
nA
μA
μA
μA
pF
ns
V
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