BAV70T,115 NXP Semiconductors, BAV70T,115 Datasheet - Page 12

• Manufacturer Part Number: BAV70T,115
• Description: DIODE DUAL 100V 150MA SOT416
• Manufacturer: NXP Semiconductors

Specifications of BAV70T,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Mounting Type: Surface Mount
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Voltage - Forward (vf) (max) @ If: 1V @ 50mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io) (per Diode): 150mA (DC)
• Diode Configuration: 1 Pair Common Cathode
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.15 A
• Max Surge Current: 4 A
• Configuration: Dual Common Cathode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934054727115::BAV70T T/R::BAV70T T/R

NXP Semiconductors
BAV70_SER_7
Product data sheet
Fig 17. Reflow soldering footprint BAV70T (SOT416/SC-75)
Fig 18. Reflow soldering footprint BAV70W (SOT323/SC-70)
Fig 19. Wave soldering footprint BAV70W (SOT323/SC-70)
3.65
2.35
2.10
0.85
Dimensions in mm
preferred transport direction during soldering
Rev. 07 — 27 November 2007
0.60
(3 )
0.55
(3 )
2.0
0.85
0.75
3
3
4.00
1.15
4.60
2.65
1.30
2.40
2
1
(3x)
0.6
1.325
2
1
0.6
solder lands
solder resist
3
2.2
0.7
1.9
2
1
msa429
1.1
0.50
(3 ) 1.90
0.90
(2 )
msa438
High-speed switching diodes
2.70
(3x)
0.5
solder paste
occupied area
Dimensions in mm
BAV70 series
1.5
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
solder lands
solder resist
occupied area
© NXP B.V. 2007. All rights reserved.
msa419
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