MBRB41H100CT-1G ON Semiconductor, MBRB41H100CT-1G Datasheet - Page 4

DIODE SCHOTTKY 100V 20A H I2PAK

MBRB41H100CT-1G

Manufacturer Part Number
MBRB41H100CT-1G
Description
DIODE SCHOTTKY 100V 20A H I2PAK
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet

Specifications of MBRB41H100CT-1G

Voltage - Forward (vf) (max) @ If
800mV @ 20A
Current - Reverse Leakage @ Vr
10µA @ 100V
Current - Average Rectified (io) (per Diode)
20A
Voltage - Dc Reverse (vr) (max)
100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Schottky Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
20 A
Max Surge Current
350 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.9 V @ 40 A
Maximum Reverse Leakage Current
10 uA
Operating Temperature Range
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBRB41H100CT-1G
Manufacturer:
ON/安森美
Quantity:
20 000
0.001
0.001
0.01
0.01
100
0.000001
0.000001
0.1
0.1
10
10
1
1
0.05
0.01
D = 0.5
0.05
0.2
0.1
0.01
D = 0.5
0.2
0.1
SINGLE PULSE
SINGLE PULSE
0.00001
0.00001
10000
1000
0.0001
0.0001
100
10
Figure 8. Thermal Response Junction−to−Ambient
0
Figure 9. Thermal Response Junction−to−Case
0.001
0.001
20
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
http://onsemi.com
40
t
t
1
1
0.01
, TIME (sec)
0.01
, TIME (sec)
4
60
0.1
0.1
80
T
J
= 25°C
1
1
100
10
10
P
P
DUTY CYCLE, D = t
DUTY CYCLE, D = t
(pk)
(pk)
100
100
t
t
1
1
t
t
2
2
1
1
/t
/t
2
2
1000
1000

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