MBRB41H100CT-1G ON Semiconductor, MBRB41H100CT-1G Datasheet - Page 6

• Manufacturer Part Number: MBRB41H100CT-1G
• Description: DIODE SCHOTTKY 100V 20A H I2PAK
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBRB41H100CT-1G

• Voltage - Forward (vf) (max) @ If: 800mV @ 20A
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 20 A
• Max Surge Current: 350 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.9 V @ 40 A
• Maximum Reverse Leakage Current: 10 uA
• Operating Temperature Range: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

H
Q
Z
L
V
G
1 2 3
4
B
N
D
A
K
F
T
U
PACKAGE DIMENSIONS
R
J
S
http://onsemi.com
CASE 221A−09
C
ISSUE AF
TO−220
−T−
6
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
STYLE 6:
Y14.5M, 1982.
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
G
H
K
N
Q
R
S
U
V
F
J
L
T
Z
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
MIN
---
INCHES
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.055
0.255
0.050
0.080
0.110
MAX
---
14.48
12.70
MILLIMETERS
MIN
9.66
4.07
0.64
3.61
2.42
2.80
0.36
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
14.27
4.82
0.88
4.09
2.66
3.93
0.64
1.52
5.33
3.04
2.79
1.39
6.47
1.27
2.04
---