MBRD650CT Vishay, MBRD650CT Datasheet - Page 2

• Manufacturer Part Number: MBRD650CT
• Description: DIODE SCHOTTKY 50V 3A D-PAK
• Manufacturer: Vishay

Specifications of MBRD650CT

• Voltage - Forward (vf) (max) @ If: 700mV @ 3A
• Current - Reverse Leakage @ Vr: 100µA @ 50V
• Current - Average Rectified (io) (per Diode): 3A
• Voltage - Dc Reverse (vr) (max): 50V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Product: Schottky Diodes
• Peak Reverse Voltage: 50 V
• Forward Continuous Current: 6 A
• Max Surge Current: 490 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.7 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: - 40 C to + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: *MBRD650CT

Document Number: 93463
MBRD650CT, MBRD660CT
Electrical Specifications
Thermal-Mechanical Specifications
Bulletin PD-20755 rev. E 05/06
Voltage Ratings
Absolute Maximum Ratings
V
I
C
L
dv/dt Max. Voltage Rate of Change
T
T
R
R
wt
I
I
E
I
(*) dPtot
V
V
F(AV)
FSM
AR
RM
S
FM
J
stg
AS
thJC
thJA
T
R
RWM
dTj
Case Style
Device Marking
Part number
Max. DC Reverse Voltage (V)
Max. Working Peak Reverse Voltage (V)
Max. Average Forward(Per Leg)
Current * See Fig. 5
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 7
Non-Repet. Aval. Energy (Per Leg)
Repetitive Avalanche Current
(Per Leg)
Max. Forward Voltage Drop
(Per Leg) * See Fig. 1
Max. Reverse Leakage Current
(Per Leg) * See Fig. 2
Typ. Junction Capacitance (Per Leg)
Typical Series Inductance (Per Leg)
Parameters
Max. Junction Temperature Range (*) -40 to 150
Max. Storage Temperature Range
Max. Thermal Resistance (Per Leg)
Junction to Case
Max. Thermal Resistance Junction
to Ambient
Approximate Weight
Parameters
Parameters
<
Rth( j-a)
1
thermal runaway condition for a diode on its own heatsink
(Per Device)
(Per Device)
(1)
(1)
Value
490
3.0
0.6
75
-40 to 150
0.3 (0.01) g (oz.)
6
6
10000
Value
Value
MBRD660CT
0.65
0.85
145
0.7
0.9
0.1
5.0
15
80
6
3
D-Pak
Units
mJ
A
A
A
Units
Units
°C/W DC operation
°C/W
V/μs (Rated V
mA
mA
nH
pF
°C
°C
V
V
V
V
50% duty cycle @ T
5μs Sine or 3μs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
Current decaying linearly to zero in 1 μsec
Frequency limited by T
MBRD650CT
J
@
@
@
@
T
V
Measured lead to lead 5mm from package body
T
Similar to TO-252AA
= 25 °C, I
J
J
R
= 25 °C
= 125 °C
= 5V
3A
6A
3A
6A
50
DC
R
AS
)
(test signal range 100Khz to 1Mhz) 25°C
Conditions
Conditions
Conditions
= 1 Amp, L = 12 mH
(1) Pulse Width < 300μs, Duty Cycle <2%
T
V
T
J
J
R
C
* See Fig. 4
= 25 °C
= 125 °C
= 128°C, rectangular wave form
= rated V
J
max. V
A
R
= 1.5 x V
Following any rated
load condition and with
rated V
MBRD660CT
www.vishay.com
RRM
R
60
typical
applied
2