MBRD650CT Vishay, MBRD650CT Datasheet - Page 4

• Manufacturer Part Number: MBRD650CT
• Description: DIODE SCHOTTKY 50V 3A D-PAK
• Manufacturer: Vishay

Specifications of MBRD650CT

• Voltage - Forward (vf) (max) @ If: 700mV @ 3A
• Current - Reverse Leakage @ Vr: 100µA @ 50V
• Current - Average Rectified (io) (per Diode): 3A
• Voltage - Dc Reverse (vr) (max): 50V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Product: Schottky Diodes
• Peak Reverse Voltage: 50 V
• Forward Continuous Current: 6 A
• Max Surge Current: 490 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.7 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: - 40 C to + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: *MBRD650CT

Document Number: 93463
MBRD650CT, MBRD660CT
Bulletin PD-20755 rev. E 05/06
(2) Formula used: T
Pd = Forward Power Loss = I
Pd
160
150
140
130
120
110
100
REV
Fig. 5 - Max. Allowable Case Temperature
= Inverse Power Loss = V
Vs. Average Forward Current (Per Leg)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Square wave (D = 0.50)
80% Rated Vr applied
Average Forward Current - I
see note (2)
C
= T
J
- (Pd + Pd
F(AV)
REV
R1
Fig. 7 - Max. Non-Repetitive Surge Current (Per Leg)
1000
DC
x V
100
x I
10
) x R
Square Wave Pulse Duration - t
FM
R
10
(1 - D); I
@ (I
thJC
At Any Rated Load Condition
And With rated Vrrm Applied
Following Surge
F(AV)
;
F(AV)
R
@ V
/
D) (see Fig. 6);
(A)
R1
100
= 80% rated V
1000
R
p
(microsec)
2.5
1.5
0.5
10000
3
2
1
0
Fig. 6 - Forward Power Loss Characteristics
0
Average Forward Current - I
RMS Limit
1
(Per Leg)
2
www.vishay.com
3
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
4
F(AV)
(A)
4
5