BY359-1500 NXP Semiconductors, BY359-1500 Datasheet - Page 2

• Manufacturer Part Number: BY359-1500
• Description: DIODE RECT 1200V 6A TO-220AC
• Manufacturer: NXP Semiconductors

Specifications of BY359-1500

• Voltage - Forward (vf) (max) @ If: 1.8V @ 20A
• Voltage - Dc Reverse (vr) (max): 1500V (1.5kV)
• Current - Average Rectified (io): 10A (DC)
• Current - Reverse Leakage @ Vr: 100µA @ 1300V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 600ns
• Mounting Type: Through Hole
• Package / Case: TO-220AC-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: Q4188801A

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
September 1998
Damper diode
fast, high-voltage
j
j
SYMBOL
V
I
SYMBOL
t
Q
V
R
rr
I
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
I
F
fr
R
s
F
Fig.1. Definition of t
PARAMETER
Forward voltage
Reverse current
PARAMETER
Reverse recovery time
Reverse recovery charge
Peak forward recovery voltage
I
rrm
dI
dt
Qs
F
trr
rr
, Q
s
and I
25%
rrm
time
CONDITIONS
I
I
V
V
T
CONDITIONS
I
-dI
I
dI
100%
F
F
F
F
j
R
R
F
= 20 A
= 10 A; T
= 2 A; V
= 10 A;
= 100 ˚C
F
/dt = 30 A/ s
= 1300 V
= 1300 V;
/dt = 20 A/ s
2
R
j
= 150˚C
30 V;
V F
I
F
TYP.
TYP.
1.00
0.47
11.0
BY359-1500
BY359-1500
1.3
1.6
10
50
BY359-1500, BY359-1500S
Fig.2. Definition of V
MAX.
MAX.
0.60
100
300
1.8
1.5
2.0
-
BY359-1500S
BY359-1500S
TYP.
TYP.
1.25
0.28
0.70
17.0
100
1.5
10
Product specification
fr
V F
MAX.
MAX.
1.75
0.35
0.95
100
600
2.0
-
time
time
Rev 1.300
UNIT
UNIT
V
V
V
V
A
A
C
s
fr