BY359-1500 NXP Semiconductors, BY359-1500 Datasheet - Page 3

DIODE RECT 1200V 6A TO-220AC

BY359-1500

Manufacturer Part Number
BY359-1500
Description
DIODE RECT 1200V 6A TO-220AC
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BY359-1500

Voltage - Forward (vf) (max) @ If
1.8V @ 20A
Voltage - Dc Reverse (vr) (max)
1500V (1.5kV)
Current - Average Rectified (io)
10A (DC)
Current - Reverse Leakage @ Vr
100µA @ 1300V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
600ns
Mounting Type
Through Hole
Package / Case
TO-220AC-2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Other names
Q4188801A

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BY359-1500
Manufacturer:
NXP
Quantity:
1 982
Part Number:
BY359-1500
Manufacturer:
PH
Quantity:
7 000
Part Number:
BY359-1500
Manufacturer:
NXP
Quantity:
60 000
Part Number:
BY359-1500
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Philips Semiconductors
September 1998
Damper diode
fast, high-voltage
I
F
Fig.3. Maximum non-repetitive rms forward current.
= f(t
Fig.4. Transient thermal impedance Z
0.001
80
70
60
50
40
30
20
10
0.01
p
0
0.1
); sinusoidal current waveform; T
10
1ms
1
1us
IFS(RMS) / A
Transient thermal impedance, Zth j-mb (K/W)
to surge with reapplied V
10us
10ms
IFSM
100us
pulse width, tp (s)
1ms
tp / s
0.1s
P
D
10ms 100ms
t
p
T
1s
RWM
D =
j
BY359
= 150˚C prior
.
t
T
p
t
1s
BY359
th
= f(t
10s
10s
p
)
3
Fig.6. BY359-1500S forward characteristic I
Fig.5. BY359-1500 forward characteristic I
30
20
10
30
20
10
0
0
0
0
IF / A
IF / A
Tj=150C
Tj=150C
Tj=25C
Tj=25C
BY359-1500, BY359-1500S
typ
parameter T
parameter T
typ
1.0
1.0
VF / V
VF / V
j
j
max
max
Product specification
2.0
2.0
BY359S
BY359
F
Rev 1.300
F
= f(V
= f(V
F
);
F
);

Related parts for BY359-1500