BAS21E6327 Infineon Technologies, BAS21E6327 Datasheet
BAS21E6327
Manufacturer Part Number
BAS21E6327
Description
DIODE SWITCHING 200V SOT-23
Manufacturer
Infineon Technologies
Specifications of BAS21E6327
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
250mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS21E6327XT
BAS21INTR
BAS21XTINTR
BAS21XTINTR
SP000010217
BAS21INTR
BAS21XTINTR
BAS21XTINTR
SP000010217
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAS21E6327
Manufacturer:
INFINEON
Quantity:
3 000
Company:
Part Number:
BAS21E6327
Manufacturer:
INF
Quantity:
5 896
Part Number:
BAS21E6327HTSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Silicon Switching Diode
BAS21
Type
BAS21
BAS21U
BAS21-03W
Maximum Ratings at T
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Surge forward current, t = 10 µs
Total power dissipation
BAS21, T
BAS21-03W, T
BAS21U, T
Junction temperature
Storage temperature
For high-speed switching applications
High breakdown voltage
S
S
70°C
S
122°C
BAS21-03W
124°C
A
= 25°C, unless otherwise specified
Package
SOT23
SC74
SOD323
BAS21U
1
Configuration
single
parallel triple
single
Symbol
V
V
I
I
I
P
T
T
F
FM
FS
j
stg
R
RM
tot
-65 ... 150
Value
350
250
250
200
250
250
625
150
4
Jan-30-2003
Marking
JSs
JSs
D
BAS21...
Unit
V
mA
A
mW
°C
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