BAS21E6327 Infineon Technologies, BAS21E6327 Datasheet - Page 2

• Manufacturer Part Number: BAS21E6327
• Description: DIODE SWITCHING 200V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BAS21E6327

• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAS21E6327XT; BAS21INTR; BAS21XTINTR; BAS21XTINTR; SP000010217

Electrical Characteristics at T
Parameter
DC Characteristics
Thermal Resistance
AC Characteristics
Test circuit for reverse recovery time
Breakdown voltage
I
Reverse current
V
V
Forward voltage
I
I
Parameter
Junction - soldering point
BAS21
BAS21-03W
BAS21U
Diode capacitance
V
Reverse recovery time
I
R
1
(BR)
F
F
F
For calculation of R
R
R
R
L
= 100 mA
= 200 mA
= 30 mA, I
= 200 V
= 200 V, T
= 100
= 0 V, f = 1 MHz
= 100 µA


R
A
= 30 mA, measured at I
= 150 °C
thJA
F
D.U.T.
please refer to Application Note Thermal Resistance
1)
Oscillograph
A
= 25°C, unless otherwise specified
EHN00018
R
= 3mA,
Puls generator: t
Oscillograph: R = 50
2
Symbol
V
I
V
Symbol
R
C
t
R
rr
(BR)
F
thJS
T
p
= 1µs, D = 0.05
min.
t
250
r

= 0.6ns, R
-
-
-
-
-
-
, t
r
Values
= 0.35ns, C
Value






typ.
230
105
110
-
-
-
-
-
-
-
i
= 50
max.
1.25
100
0.1
Jan-30-2003
50
1

-
5
BAS21...


1pF
Unit
V
V
µA
pF
Unit
K/W
ns