BAS321,115 NXP Semiconductors, BAS321,115 Datasheet - Page 4

• Manufacturer Part Number: BAS321,115
• Description: DIODE GP 250V 250MA SOD323
• Manufacturer: NXP Semiconductors

Specifications of BAS321,115

• Package / Case: SC-76, SOD-323, UMD2
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 200V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Current - Average Rectified (io): 250mA (DC)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 250 V
• Forward Voltage Drop: 1.25 V
• Recovery Time: 50 ns
• Forward Continuous Current: 0.25 A
• Max Surge Current: 9 A
• Reverse Current Ir: 0.1 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055352115::BAS321 T/R::BAS321 T/R

NXP Semiconductors
GRAPHICAL DATA
2004 Jan 26
handbook, halfpage
handbook, full pagewidth
General purpose diode
Device mounted on an FR4 printed-circuit board.
Based on square wave currents.
T
j
I FSM
(mA)
= 25 °C prior to surge.
(A)
10
I F
300
200
100
10
Fig.2
10
−1
0
1
2
0
1
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Maximum permissible continuous
forward current as a function of
ambient temperature.
50
100
10
150
T amb (°C)
MBK927
200
10
4
2
handbook, halfpage
(1) T
(2) T
(3) T
(mA)
600
400
200
I F
j
j
j
0
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
Fig.3
0
Forward current as a function of
forward voltage.
10
3
1
(1)
(2)
t p (µs)
V F (V)
Product data sheet
(3)
BAS321
MBG384
MBG703
10
2
4