BYW29E-100,127 NXP Semiconductors, BYW29E-100,127 Datasheet - Page 2

• Manufacturer Part Number: BYW29E-100,127
• Description: DIODE RECT 100V 8A SOD59
• Manufacturer: NXP Semiconductors

Specifications of BYW29E-100,127

• Package / Case: TO-220AC-2
• Voltage - Forward (vf) (max) @ If: 1.05V @ 8A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Mounting Type: Through Hole
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 1.3 V at 20 A
• Recovery Time: 25 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 88 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934011640127; BYW29E-100; BYW29E-100

Philips Semiconductors
THERMAL RESISTANCES
ELECTRICAL CHARACTERISTICS
T
August 2001
Rectifier diodes
ultrafast, rugged
SYMBOL PARAMETER
R
R
SYMBOL PARAMETER
V
I
Q
t
t
V
j
R
rr1
rr2
= 25 ˚C unless otherwise specified
F
fr
th j-mb
th j-a
rr
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
Forward voltage
Reverse current
Reverse recovered charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
CONDITIONS
in free air
CONDITIONS
I
I
I
V
V
I
I
I
I
F
F
F
F
F
F
F
R
R
= 8 A; T
= 8 A
= 20 A
= 2 A; V
= 1 A; V
= 0.5 A to I
= 1 A; dI
= V
= V
RWM
RWM
; T
j
R
R
F
= 150˚C
/dt = 10 A/µs
≥ 30 V; -dI
≥ 30 V; -dI
j
R
= 100˚C
2
= 1 A; I
rec
F
F
/dt = 20 A/µs
/dt = 100 A/µs
= 0.25 A
MIN.
MIN.
-
-
-
-
-
-
-
-
-
-
BYW29E series
TYP. MAX. UNIT
TYP. MAX. UNIT
0.92
Product specification
0.8
1.1
0.2
60
20
15
2
4
1
-
0.895
1.05
2.7
1.3
0.6
10
11
25
20
-
-
Rev 1.400
K/W
K/W
mA
nC
µA
ns
ns
V
V
V
V