BYW29E-100,127 NXP Semiconductors, BYW29E-100,127 Datasheet - Page 5

DIODE RECT 100V 8A SOD59

BYW29E-100,127

Manufacturer Part Number
BYW29E-100,127
Description
DIODE RECT 100V 8A SOD59
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BYW29E-100,127

Package / Case
TO-220AC-2
Voltage - Forward (vf) (max) @ If
1.05V @ 8A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
10µA @ 100V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
25ns
Mounting Type
Through Hole
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
100 V
Forward Voltage Drop
1.3 V at 20 A
Recovery Time
25 ns
Forward Continuous Current
8 A
Max Surge Current
88 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934011640127
BYW29E-100
BYW29E-100
Philips Semiconductors
MECHANICAL DATA
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 2001
Rectifier diodes
ultrafast, rugged
Dimensions in mm
Net Mass: 2 g
Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
OUTLINE
VERSION
SOD59
4.5
4.1
A
1.39
1.27
A 1
0.9
0.7
b
Fig.12. TO220AC; pin 1 connected to mounting base.
IEC
D
L
b 1
1.3
1.0
L 2
D 1
(1)
b 1
0.7
0.4
c
2-lead TO-220
1
JEDEC
15.8
15.2
D
E
P
e
5
REFERENCES
6.4
5.9
D 1
2
0
b
10.3
9.7
E
L 1
q
scale
EIAJ
5
5.08
e
10 mm
15.0
13.5
L
3.30
2.79
L 1
L 2
Q
3.0
(1)
A
A 1
PROJECTION
3.8
3.6
c
EUROPEAN
P
BYW29E series
3.0
2.7
q
Product specification
2.6
2.2
Q
ISSUE DATE
97-06-11
Rev 1.400
SOD59

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