IRG4PSC71KDPBF International Rectifier, IRG4PSC71KDPBF Datasheet - Page 3

• Manufacturer Part Number: IRG4PSC71KDPBF
• Description: IGBT UFAST W/DIODE 600V SUPER247
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4PSC71KDPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 60A
• Current - Collector (ic) (max): 85A
• Power - Max: 350W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Capacitance, Gate: 6900 pF
• Current, Collector: 85 A
• Energy Rating: 6.28 mJ
• Package Type: SUPER-247
• Polarity: N-Channel
• Power Dissipation: 350 W
• Resistance, Thermal, Junction To Case: 0.36 °C/W
• Speed, Switching: 8 to 25 kHz
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 2.2 V
• Transistor Type: IGBT
• Dc Collector Current: 85A
• Collector Emitter Voltage Vces: 2.3V
• Power Dissipation Pd: 350W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Package: TO-274AA
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 600
• Ic @ 25c (a): 85
• Ic @ 100c (a): 60
• Vce(on)@25c Typ (v): 1.83
• Vce(on)@25c Max (v): 2.30
• Ets Typ (mj): 6.28
• Ets Max (mj): 7.7
• Qrr Typ Nc 25c: 364
• Qrr Max Nc 25c: 546
• Vf Typ: 1.40
• Pd @25c (w): 350
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PSC71KDPBF

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1 0 0 0
1 0 0
Fig. 2 - Typical Output Characteristics
1 0
60
45
30
15
0
1
0.1
0
T = 1 5 0 °C
S q u a re w a v e :
V
J
C E
, C olle ctor-to-Em itter Vo ltag e (V)
6 0% of rate d
1
Id e a l d io d e s
I
volta ge
T = 2 5 °C
J
2
Fig. 1 - Typical Load Current vs. Frequency
V
2 0µ s P U L SE W ID TH
G E
= 15 V
(Load Current = I
3
1
4
f, Frequency (KHz)
A
RMS
of fundamental)
1000
100
10
Fig. 3 - Typical Transfer Characteristics
1
5
T = 150 C
J
V
6
GE
10
°
, Gate-to-Emitter Voltage (V)
7
T = 25 C
J
IRG4PSC71KD
F o r b o th :
D u ty c y c le : 5 0 %
T = 1 2 5 ° C
T
G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n =
J
sink
8
°
V
5µs PULSE WIDTH
= 9 0 ° C
CC
9
= 50V
10
58
W
3
100
11