STGB10NC60HDT4 STMicroelectronics, STGB10NC60HDT4 Datasheet - Page 10

• Manufacturer Part Number: STGB10NC60HDT4
• Description: IGBT N-CH 600V 20A D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB10NC60HDT4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 5A
• Current - Collector (ic) (max): 20A
• Power - Max: 65W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 65W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-6184-2

Test circuit
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Figure 18. Test circuit for inductive load
Figure 20. Switching waveform
Test circuit
switching
STGB10NC60HD, STGD10NC60HD, STGF10NC60HD, STGP10NC60HD
Figure 19. Gate charge test circuit
Figure 21. Diode recovery time waveform