STGB10NC60HDT4 STMicroelectronics, STGB10NC60HDT4 Datasheet - Page 4

• Manufacturer Part Number: STGB10NC60HDT4
• Description: IGBT N-CH 600V 20A D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB10NC60HDT4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 5A
• Current - Collector (ic) (max): 20A
• Power - Max: 65W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 65W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-6184-2

Electrical characteristics
2
4/19
Electrical characteristics
(T
Table 4.
1. Pulse duration = 300 μs, duty cycle 1.5 %
Table 5.
V
Symbol
Symbol
V
V
CASE
(BR)CES
g
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
fs
Q
oes
ies
res
ge
gc
(1)
g
= 25 °C unless otherwise specified)
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
GE
GE
Static
Dynamic
= 0)
= 0)
STGB10NC60HD, STGD10NC60HD, STGF10NC60HD, STGP10NC60HD
Parameter
Parameter
CE
= 0)
V
V
V
V
(see Figure 19)
I
V
V
T
V
V
V
V
C
CE
GE
CE
GE
GE
GE
C
GE
CE
CE
CE
CE
= 1 mA
= 125 °C
= V
= 25 V, f = 1 MHz,
= 0
= 390 V, I
= 15 V
= 600 V
= 600 V, T
= 15 V, I
= 15 V, I
= ± 20 V
= 15 V
Test conditions
Test conditions
GE
, I
,
C
I
C
C
C
= 250 µA
C
= 5 A
= 5 A
= 5 A,
C
= 5 A,
= 125 °C
Min.
Min.
3.75
600
Typ.
Typ.
19.2
365
8.3
4.5
1.9
1.7
3.5
43
7
±100
Max.
Max.
5.75
150
2.5
1
Unit
Unit
mA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
V
V
S