HGT1S12N60A4S9A Fairchild Semiconductor, HGT1S12N60A4S9A Datasheet

IGBT SMPS N-CHAN 600V TO-263AB

HGT1S12N60A4S9A

Manufacturer Part Number
HGT1S12N60A4S9A
Description
IGBT SMPS N-CHAN 600V TO-263AB
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGT1S12N60A4S9A

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 12A
Current - Collector (ic) (max)
54A
Power - Max
167W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
HGT1S12N60A4S9ATR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGT1S12N60A4S9A
Manufacturer:
Fairchild Semiconductor
Quantity:
135
600V, SMPS Series N-Channel IGBTs
The HGTP12N60A4, HGTG12N60A4 and
HGT1S12N60A4S9A are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49335.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
©2003 Fairchild Semiconductor Corporation
HGTP12N60A4
HGTG12N60A4
HGT1S12N60A4S9A
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
PART NUMBER
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
G
TO-220AB
TO-247
TO-263AB
PACKAGE
E
C
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
Data Sheet
12N60A4
12N60A4
12N60A4
o
C and 150
BRAND
o
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
C.
HGTP12N60A4, HGTG12N60A4,
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
Features
• >100kHz Operation at 390V, 12A
• 200kHz Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T
• Low Conduction Loss
• Related Literature
Packaging
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
COLLECTOR
August 2003
JEDEC TO-220AB ALTERNATE VERSION
(FLANGE)
(BOTTOM SIDE METAL)
G
E
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
COLLECTOR
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
JEDEC STYLE TO-247
HGT1S12N60A4S9A
JEDEC TO-263AB
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
COLLECTOR
(FLANGE)
E
C
G
4,587,713
4,644,637
4,801,986
4,883,767
G
E
C
J
= 125
o
C

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HGT1S12N60A4S9A Summary of contents

Page 1

... Data Sheet 600V, SMPS Series N-Channel IGBTs The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...

Page 2

... HGTG12N60A4, HGTP12N60A4, HGT1S12N60A4S9A 600 CES 54 C25 GES 30 GEM 60A at 600V 167 D 1. -55 to 150 J STG 300 L 260 PKG MIN TYP 600 - 125 2 125 15V 15V - 20V - 160 - 50 HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2 UNITS MAX UNITS - 250 A 2.0 mA 2 250 120 ...

Page 3

... V , COLLECTOR TO EMITTER VOLTAGE ( 390V 125 GATE TO EMITTER VOLTAGE (V) GE FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2 MAX UNITS - 170 350 J 285 J o 0.75 C/W ON2 500 600 700 300 275 250 225 SC 200 175 150 125 SC 100 75 ...

Page 4

... COLLECTOR TO EMITTER VOLTAGE (V) CE 400 500 390V G CE 350 300 125 12V OR 15V 250 J GE 200 150 100 COLLECTOR TO EMITTER CURRENT (A) CE COLLECTOR TO EMITTER CURRENT 500 390V 125 12V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev 2.5 = 12V OR 15V 125 15V ...

Page 5

... L = 500 390V 125 12V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 1mA G(REF 600V 400V 200V GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS 125 500 390V TOTAL ON2 OFF I = 24A 12A 0 100 R , GATE RESISTANCE ( ) G HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev 12V OR 15V 15V GE 1000 ...

Page 6

... FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE - RECTANGULAR PULSE DURATION ( 390V DD - DUTY CYCLE < 0.5 PULSE DURATION = 250 GATE TO EMITTER VOLTAGE ( GATE TO EMITTER VOLTAGE DUTY FACTOR PEAK 90% 10% E ON2 E OFF 90% 10% t d(OFF d(ON)I FIGURE 21. SWITCHING TEST WAVEFORMS HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev 15V 18A = 12A = ...

Page 7

... A 50% duty factor was used (Figure 3) and the ) are approximated )/2. CE are defined in the switching waveforms OFF is the integral of the ON2 during turn-on and during turn-off. All tail losses are included in the ; i.e., the collector current equals zero OFF HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev The ON2 - T )/ ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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