HGT1S12N60A4S9A Fairchild Semiconductor, HGT1S12N60A4S9A Datasheet - Page 8

• Manufacturer Part Number: HGT1S12N60A4S9A
• Description: IGBT SMPS N-CHAN 600V TO-263AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1S12N60A4S9A

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 12A
• Current - Collector (ic) (max): 54A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: HGT1S12N60A4S9ATR

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Rev. I5