IRG4BH20K-SPBF International Rectifier, IRG4BH20K-SPBF Datasheet - Page 3

• Manufacturer Part Number: IRG4BH20K-SPBF
• Description: IGBT UFAST 1200V 11A D2PAK
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4BH20K-SPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.3V @ 15V, 5A
• Current - Collector (ic) (max): 11A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Capacitance, Gate: 435 pF
• Current, Collector: 11 A
• Energy Rating: 130 mJ
• Package Type: D2Pak
• Polarity: N-Channel
• Power Dissipation: 60 W
• Resistance, Thermal, Junction To Case: 2.1 °C/W
• Speed, Switching: 4 to 20 kHz
• Transistor Type: NPN
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 4.04 V
• Dc Collector Current: 11A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 60W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part
• Other names: *IRG4BH20K-SPBF

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100
0.1
10
Fig. 2 - Typical Output Characteristics
1
1
Sq uare wav e:
T = 150 C
J
V
CE
60% of rated
Ideal diodes
°
, Collector-to-Emitter Voltage (V)
voltage
T = 25 C
J
Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
GE
°
= 15V
(Load Current = I
10
RMS
of fundamental)
F or both:
Duty cycle: 50%
T = 125˚ C
T
Gate drive as specified
Power Dissipation = 15W
J
100
sink
Fig. 3 - Typical Transfer Characteristics
10
1
6
= 90˚ C
T = 150 C
J
V
GE
8
, Gate-to-Emitter Voltage (V)
°
T = 25 C
J
IRG4BH20K-S
Triangular wave:
10
°
V
5µs PULSE WIDTH
Clamp voltage:
80% of rated
CC
= 50V
12
3
14