IKA15N60T Infineon Technologies, IKA15N60T Datasheet - Page 2

IGBT 600V 14.7A 35.7W TO220-3

IKA15N60T

Manufacturer Part Number
IKA15N60T
Description
IGBT 600V 14.7A 35.7W TO220-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKA15N60T

Package / Case
TO-220-3 (Straight Leads)
Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.05V @ 15V, 15A
Current - Collector (ic) (max)
14.7A
Power - Max
35.7W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 175 C
Continuous Collector Current Ic Max
14.7 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Package Type
TO-220
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-40C
Operating Temperature (max)
175C
Operating Temperature Classification
Automotive
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
TO-220
Vce (max)
600.0 V
Ic(max) @ 25°
14.7 A
Ic(max) @ 100°
8.9 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IKA15N60TXK

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IKA15N60T
Manufacturer:
AD
Quantity:
201
Part Number:
IKA15N60T
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IKA15N60T
0
Company:
Part Number:
IKA15N60T
Quantity:
2 000
Part Number:
IKA15N60TXKSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IKA15N60TXKSA1
Quantity:
2 400
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at T
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
Power Semiconductors
Allowed number of short circuits: <1000; time between short circuits: >1s.
1)
j
= 25 °C, unless otherwise specified
R
R
R
V
V
V
V
I
I
g
R
C
C
C
Q
L
I
Symbol
Symbol
C E S
G E S
C ( S C )
f s
E
t h J C
t h J C D
t h J A
( B R ) C E S
C E ( s a t )
F
G E ( t h )
G i n t
i s s
o s s
r s s
G a t e
2
TrenchStop
V
V
T
T
V
T
T
I
V
V
T
T
V
V
V
V
f=1MHz
V
V
V
V
T
C
j
j
j
j
j
j
j
G E
G E
G E
C E
G E
C E
C E
C E
G E
C C
G E
G E
C C
= 25°C
= 175 °C
= 25°C
= 175 °C
=210µA,V
= 25°C
= 175 °C
≤ 150°C
=0V, I
=0V, I
= 60 0 V
=0V
= 0 V , V
=20V, I
=25V,
=0V,
= 48 0 V, I
=15V
=15V,t
= 400 V,
= 15 V, I
Conditions
Conditions
C
F
G E
,
S C
= 1 5 A
=0.2mA
C
C E
=20V
®
=15A
C
C
≤5 μs
=15A
=15A
Series
=V
G E
min.
600
4.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max. Value
IKA15N60T
Value
137.5
Typ.
1.65
860
4.2
4.8
1.5
1.9
1.6
4.9
8.7
80
55
24
87
7
-
-
-
-
-
Rev. 2.2 Jan 07
max.
1000
2.05
2.05
100
5.7
40
-
-
-
-
-
-
-
-
-
-
Unit
K/W
Unit
V
µA
nA
S
pF
nC
nH
A
q

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