IKA15N60T Infineon Technologies, IKA15N60T Datasheet - Page 2

• Manufacturer Part Number: IKA15N60T
• Description: IGBT 600V 14.7A 35.7W TO220-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKA15N60T

• Package / Case: TO-220-3 (Straight Leads)
• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 15A
• Current - Collector (ic) (max): 14.7A
• Power - Max: 35.7W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Continuous Collector Current Ic Max: 14.7 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Automotive
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 14.7 A
• Ic(max) @ 100°: 8.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IKA15N60TXK

Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at T
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
Power Semiconductors
Allowed number of short circuits: <1000; time between short circuits: >1s.
1)
j
= 25 °C, unless otherwise specified
R
R
R
V
V
V
V
I
I
g
R
C
C
C
Q
L
I
Symbol
Symbol
C E S
G E S
C ( S C )
f s
E
t h J C
t h J C D
t h J A
( B R ) C E S
C E ( s a t )
F
G E ( t h )
G i n t
i s s
o s s
r s s
G a t e
2
TrenchStop
V
V
T
T
V
T
T
I
V
V
T
T
V
V
V
V
f=1MHz
V
V
V
V
T
C
j
j
j
j
j
j
j
G E
G E
G E
C E
G E
C E
C E
C E
G E
C C
G E
G E
C C
= 25°C
= 175 °C
= 25°C
= 175 °C
=210µA,V
= 25°C
= 175 °C
≤ 150°C
=0V, I
=0V, I
= 60 0 V
=0V
= 0 V , V
=20V, I
=25V,
=0V,
= 48 0 V, I
=15V
=15V,t
= 400 V,
= 15 V, I
Conditions
Conditions
C
F
G E
,
S C
= 1 5 A
=0.2mA
C
C E
=20V
®
=15A
C
C
≤5 μs
=15A
=15A
Series
=V
G E
min.
600
4.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max. Value
IKA15N60T
Value
137.5
Typ.
1.65
860
4.2
4.8
1.5
1.9
1.6
4.9
8.7
80
55
24
87
7
-
-
-
-
-
Rev. 2.2 Jan 07
max.
1000
2.05
2.05
100
5.7
40
-
-
-
-
-
-
-
-
-
-
Unit
K/W
Unit
V
µA
nA
S
Ω
pF
nC
nH
A
q