IKA15N60T Infineon Technologies, IKA15N60T Datasheet - Page 3

• Manufacturer Part Number: IKA15N60T
• Description: IGBT 600V 14.7A 35.7W TO220-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKA15N60T

• Package / Case: TO-220-3 (Straight Leads)
• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 15A
• Current - Collector (ic) (max): 14.7A
• Power - Max: 35.7W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Continuous Collector Current Ic Max: 14.7 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Automotive
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 14.7 A
• Ic(max) @ 100°: 8.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IKA15N60TXK

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Power Semiconductors
Leakage inductance L
σ
b
b
a nd Stray capacity C
t
t
t
t
E
E
E
t
Q
I
d i
t
t
t
t
E
E
E
t
Q
I
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
r r m
d ( o n )
r
d ( o f f )
f
r r
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
r r
r r
/ d t
/ d t
σ
j
j
=25 °C
=175 °C
3
due to dynamic test circuit in Figure E.
TrenchStop
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
σ
σ
j
j
j
j
C C
G E
R
C C
G E
R
G
σ
G
σ
= 25°C ,
= 25°C ,
F
= 175 °C ,
= 175 °C
F
1 )
1 )
1 )
1 )
= 40 0 V , I
= 40 0 V , I
= 1 5Ω ,
= 1 5 Ω
/ d t= 825A/μs
/ d t= 825A/μs
= 40 0 V, I
=0 /1 5V,
= 40 0 V, I
= 0 /1 5 V,
=1 54nH,
=1 54nH ,
=39pF
=39pF
Conditions
Conditions
F
F
C
C
®
=15A,
=15A,
=15A,
=15A,
Series
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKA15N60T
Value
Value
Typ.
Typ.
0.22
0.35
0.57
0.24
10.4
0.34
0.47
0.81
14.7
188
718
212
140
495
1.0
17
11
50
34
17
15
79
Rev. 2.2 Jan 07
max.
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
mJ
ns
µC
A
A/μs
Unit
ns
mJ
ns
µC
A
A/μs
q