FDC6304P Fairchild Semiconductor, FDC6304P Datasheet
FDC6304P
Manufacturer Part Number
FDC6304P
Description
MOSFET P-CH DUAL 25V SSOT-6
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDC6304P.pdf
(5 pages)
Specifications of FDC6304P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.1 Ohm @ 500mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
460mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
62pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1.1 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
0.8 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
0.46 A
Power Dissipation
900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC6304P
FDC6304PTR
FDC6304PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC6304P
Manufacturer:
FAIRCHILD
Quantity:
9 135
Part Number:
FDC6304P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Symbol
V
V
I
P
T
ESD
THERMAL CHARACTERISTICS
R
R
© 1997 Fairchild Semiconductor Corporation
D
FDC6304P
Digital FET, Dual P-Channel
These P-Channel enhancement mode field effect transistor are
produced using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is tailored to minimize
on-state resistance at low gate drive conditions. This device is
designed especially for application in battery power applications
such as notebook computers and cellular phones. This device
has excellent on-state resistance even at gate drive voltages as
low as 2.5 volts.
Absolute Maximum Ratings
General Description
DSS
GSS
D
J
,T
JA
JC
STG
SOT-23
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
SuperSOT
Mark: .304
TM
- Continuous
- Pulsed
-6
T
A
= 25
o
C unless other wise noted
SuperSOT
(Note 1b)
(Note 1a)
(Note 1a)
(Note 1)
TM
-8
Features
-25 V, -0.46 A continuous, -1.0 A Peak.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model.
SO-8
R
R
DS(ON)
DS(ON)
4
6
5
FDC6304P
-55 to 150
= 1.1
-0.46
= 1.5
140
6.0
-25
0.9
0.7
60
-8
-1
SOT-223
@ V
@ V
GS(th)
GS
GS
< 1.5 V.
= -2.7 V
= -4.5 V.
3
2
1
SOIC-16
July 1997
FDC6304P Rev.D
Units
°C/W
°C/W
°C
kV
W
V
V
A
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FDC6304P Summary of contents
Page 1
... Human Body Model. TM SuperSOT -8 SO unless other wise noted A (Note 1a) (Note 1b) (Note 1a) (Note 1) July 1997 -2.7 V DS(ON 1 -4.5 V. DS(ON) GS < 1.5 V. GS(th) SOIC-16 SOT-223 FDC6304P -25 -8 -0.46 -1 0.9 0.7 -55 to 150 6.0 140 60 FDC6304P Rev.D Units °C kV °C/W °C/W ...
Page 2
... C 0.005 in of pad of 2oz copper. Min Typ Max - -22 - 55°C J -100 o 2.1 C -0.65 -0.86 -1.5 1.22 0.87 T =125°C 1.21 J -0 110 35 1.1 0.32 0.28 -0.5 -0.88 -1.2 (Note 2) JC Units µA µ 1 guaranteed by FDC6304P Rev.D ...
Page 3
... Drain Current and Gate Voltage -0.5A 25°C D 125°C -1.5 -2 -2 GATE TO SOURCE VOLTAGE (V) GS Gate-To- Source Voltage 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. 1 -4.5 -5 1.2 FDC6304P Rev.D ...
Page 4
... Figure 10. Single Pulse Maximum Power 0.01 0 TIME (sec iss C oss C rss = 0 V 0.3 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =See note 25° SINGLE PULSE TIME (SEC) Dissipation. R ( See Note 1b JA P(pk ( Duty Cycle 100 . 300 FDC6304P Rev.D ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...