FDMA1023PZ Fairchild Semiconductor, FDMA1023PZ Datasheet

MOSFET P-CHAN DUAL MICROFET2X2

FDMA1023PZ

Manufacturer Part Number
FDMA1023PZ
Description
MOSFET P-CHAN DUAL MICROFET2X2
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMA1023PZ

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
72 mOhm @ 3.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 4.5V
Input Capacitance (ciss) @ Vds
655pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.072 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3.7 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA1023PZTR

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Quantity:
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Part Number:
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Manufacturer:
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Quantity:
30 055
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©2010 Fairchild Semiconductor Corporation
FDMA1023PZ Rev.C4
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMA1023PZ
Dual P-Channel PowerTrench
–20V, –3.7A, 72m
Features
V
V
I
P
T
R
R
R
R
D
DS
GS
D
J
, T
Max r
Max r
Max r
Max r
Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
HBM ESD protection level > 2kV typical (Note 3)
RoHS Compliant
Free from halogenated compounds and antimony
oxides
JA
JA
JA
JA
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
023
= 72m at V
= 95m at V
= 130m at V
= 195m at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
MicroFET 2X2
GS
GS
GS
GS
= –4.5V, I
= –2.5V, I
FDMA1023PZ
= –1.8V, I
= –1.5V, I
-Pulsed
Device
Pin 1
D
D
D
D
= –3.7A
= –3.2A
D1
= –2.0A
= –1.0A
T
D1
A
S1
= 25°C unless otherwise noted
G2
Parameter
G1
D2
MicroFET 2X2
®
S2
Package
MOSFET
D2
1
General Description
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
Reel Size
S1
G1
D2
7”
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1d)
(Note 1c)
1
2
3
Tape Width
8mm
–55 to +150
Ratings
–3.7
151
–20
173
1.5
0.7
86
69
±8
–6
6
5
4
May 2010
www.fairchildsemi.com
D1
S2
G2
3000 units
Quantity
Units
°C/W
°C
W
V
V
A
tm

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FDMA1023PZ Summary of contents

Page 1

... Thermal Resistance for Dual Operation, Junction to Ambient JA Package Marking and Ordering Information Device Marking Device 023 FDMA1023PZ ©2010 Fairchild Semiconductor Corporation FDMA1023PZ Rev.C4 ® MOSFET General Description = –3.7A This device is designed specifically as a single package D solution for the battery charge switch in cellular handset = – ...

Page 2

... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics I Maximum Continuous Source-Drain Diode Forward Current S V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr FDMA1023PZ Rev. 25°C unless otherwise noted J Test Conditions I = –250 –250 A, referenced to 25° –16V, V ...

Page 3

... Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDMA1023PZ Rev.C4 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R pad copper, 1.5" x 1.5" x 0.062" thick PCB. For single operation. ...

Page 4

... Figure 3. Normalized On-Resistance vs Junction Temperature 6 PULSE DURATION = 300 s DUTY CYCLE = 2.0%MAX - 125 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMA1023PZ Rev. 25°C unless otherwise noted J 2.6 2.2 1 -1.5V GS 1.4 1.0 0.6 1.5 2.0 200 160 120 100 125 150 ...

Page 5

... 0.01 0 DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 SINGLE PULSE 0.005 - FDMA1023PZ Rev. 25°C unless otherwise noted -10V DD = -15V 100us 1ms 10ms 100ms 1s 10s RECTANGULAR PULSE DURATION (s) Figure 11 ...

Page 6

... Dimensional Outline and Pad Layout FDMA1023PZ Rev.C4 6 www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMA1023PZ Rev.C4 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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