FDMA1023PZ Fairchild Semiconductor, FDMA1023PZ Datasheet - Page 5

• Manufacturer Part Number: FDMA1023PZ
• Description: MOSFET P-CHAN DUAL MICROFET2X2
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA1023PZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 72 mOhm @ 3.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 655pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.072 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.7 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA1023PZTR

FDMA1023PZ Rev.C4
Typical Characteristics
0.01
0.1
10
20
Figure 7.
0.005
1
5
4
3
2
1
0
0.01
0.1
0.1
0
2
1
r
V
SINGLE PULSE
R
T
10
DS(on)
A =
I
GS
D
Figure 9. Forward Bias Safe
JA
-4
= -3.7A
=-4.5V
25
=
-V DS , DRAIN to SOURCE VOLTAGE (V)
173
LIMIT
o
C
2
o
Gate Charge Characteristics
C/W
Operating Area
DUTY CYCLE-DESCENDING ORDER
D = 0.5
Q
g
, GATE CHARGE(nC)
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
1
10
V
4
DD
-3
= -5V
V
DD
T
Figure 11. Transient Thermal Response Curve
= -15V
J
6
= 25°C unless otherwise noted
V
DD
10
10
= -10V
-2
8
100ms
1s
10s
DC
t, RECTANGULAR PULSE DURATION (s)
100us
1ms
10ms
60
10
10
-1
5
1000
100
100
0.5
10
10
40
Figure 8.
10
1
0.1
0
Figure 10.
-4
SINGLE PULSE
R
T
f = 1MHz
V
V
A
GS
10
GS
JA
=25
-V
-3
= 0V
= 173
= -10V
DS
o
C
Power Dissipation
Capacitance Characteristics
NOTES:
DUTY FACTOR: D = t
PEAK T
, DRAIN TO SOURCE VOLTAGE (V)
10
o
Single Pulse Maximum
t, PULSE WIDTH (s)
C/W
10
-2
1
J
= P
SINGLE PULSE
10
DM
1
-1
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
x Z
I = I
P
10
DM
JA
25
1
0
/t
x R
2
10
o
2
JA
C DERATE PEAK
150 T
---------------------- -
t
10
1
+ T
125
t
1
–
2
A
C
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C
C
A
oss
T
rss
iss
A
10
= 25
10
2
o
C
10
10
20
3
3