SI4931DY-T1-E3 Vishay, SI4931DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4931DY-T1-E3
• Description: MOSFET P-CH DUAL 12V 6.7A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4931DY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 1V @ 350µA
• Gate Charge (qg) @ Vgs: 52nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.018 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -8.9A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 8V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4931DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Document Number: 72379
S09-0704-Rev. C, 27-Apr-09
0.10
0.08
0.06
0.04
0.02
0.00
30
10
1
5
4
3
2
1
0
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
0.2
= 8.9 A
On-Resistance vs. Drain Current
= 6 V
V
6
V
GS
SD
T
10
Q
0.4
J
= 1.8 V
g
= 150 °C
– Source-to-Drain Voltage (V)
I
D
– Total Gate Charge (nC)
– Drain Current (A)
Gate Charge
12
0.6
20
0.8
18
T
J
1.0
= 25 °C
V
V
GS
GS
30
24
= 2.5 V
= 4.5 V
1.2
30
1.4
40
5000
4000
3000
2000
1000
0.10
0.08
0.06
0.04
0.02
0.00
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
I
D
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
= 3.6 A
V
I
D
- 25
GS
C
= 8.9 A
rss
= 4.5 V
2
1
T
V
0
J
V
DS
– Junction Temperature (°C)
GS
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
4
25
Capacitance
I
D
2
= 8.9 A
50
C
Vishay Siliconix
6
C
oss
iss
75
3
Si4931DY
8
100
www.vishay.com
4
10
125
150
12
5
3