SI4931DY-T1-E3 Vishay, SI4931DY-T1-E3 Datasheet

MOSFET P-CH DUAL 12V 6.7A 8-SOIC

SI4931DY-T1-E3

Manufacturer Part Number
SI4931DY-T1-E3
Description
MOSFET P-CH DUAL 12V 6.7A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4931DY-T1-E3

Transistor Polarity
P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 8.9A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
6.7A
Vgs(th) (max) @ Id
1V @ 350µA
Gate Charge (qg) @ Vgs
52nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.018 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
6.7 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-8.9A
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
28mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
8V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4931DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4931DY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
27 465
Part Number:
SI4931DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72379
S09-0704-Rev. C, 27-Apr-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 12
(V)
G
G
S
S
1
1
2
2
1
2
3
4
Si4931DY -T1-E3
Si4931DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
SO-8
0.018 at V
0.022 at V
0.028 at V
R
DS(on)
J
a
= 150 °C)
a
Dual P-Channel 12-V (D-S) MOSFET
GS
GS
GS
8
7
6
5
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
(Lead (Pb)-free)
D
D
D
D
1
1
2
2
a
a
A
= 25 °C, unless otherwise noted
I
Steady State
Steady State
D
- 8.9
- 8.1
- 3.6
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Advanced High Cell Density Process
• Compliant to RoHS Directive 2002/95/EC
• Load Switching
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
G
stg
1
P-Channel MOSFET
®
Power MOSFET
S
D
Typical
1
1
10 s
- 8.9
- 7.1
- 1.7
2.0
1.3
46
80
24
- 55 to 150
- 12
- 30
± 8
Steady State
Maximum
- 6.7
- 5.4
- 0.9
62.5
110
G
1.1
0.7
32
Vishay Siliconix
2
P-Channel MOSFET
Si4931DY
www.vishay.com
S
D
2
2
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI4931DY-T1-E3

SI4931DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4931DY -T1-E3 (Lead (Pb)-free) Si4931DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4931DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72379 S09-0704-Rev. C, 27-Apr °C J 0.8 1.0 1.2 1.4 Si4931DY Vishay Siliconix 5000 4000 C iss 3000 2000 C oss 1000 C rss – Drain-to-Source Voltage (V) DS Capacitance ...

Page 4

... Si4931DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 0.4 0 0.2 0.1 0.0 - 0 – Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 350 µA 75 100 125 150 100 Limited DS(on D(on) 1 Limited ° ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72379. Document Number: 72379 S09-0704-Rev. C, 27-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4931DY Vishay Siliconix www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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