BSO150N03 Infineon Technologies, BSO150N03 Datasheet - Page 6

• Manufacturer Part Number: BSO150N03
• Description: MOSFET N-CHAN 30V 7.6A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO150N03

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 9.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.6A
• Vgs(th) (max) @ Id: 2V @ 25µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 1890pF @ 15V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO150N03; BSO150N03INTR; BSO150N03XT; SP000077687

Rev. 1.6
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
25
20
15
10
4
3
2
DS
=f(T
5
0
10000
1000
100
0
10
-60
); V
j
); I
GS
D
5
-20
=0 V; f =1 MHz
=9.1 A; V
10
20
98 %
GS
V
Coss
T
=10 V
Ciss
DS
Crss
j
15
60
[°C]
[V]
typ
100
20
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
100
2.5
1.5
0.5
0.1
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
D
j
GS
-20
0.2
=V
DS
0.4
20
25 µA
V
T
SD
j
0.6
60
[°C]
250 µA
[V]
100
0.8
150 °C
BSO150N03
150 °C, 98 %
140
25 °C, 98%
1.0
25 °C
2008-01-16
180
1.2