BSO150N03 Infineon Technologies, BSO150N03 Datasheet - Page 7
![MOSFET N-CHAN 30V 7.6A DSO-8](/photos/5/43/54385/bso150n03_sml.jpg)
BSO150N03
Manufacturer Part Number
BSO150N03
Description
MOSFET N-CHAN 30V 7.6A DSO-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSO150N03.pdf
(9 pages)
Specifications of BSO150N03
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 9.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.6A
Vgs(th) (max) @ Id
2V @ 25µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
1890pF @ 15V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
DSO-8
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.6 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSO150N03
BSO150N03INTR
BSO150N03XT
SP000077687
BSO150N03INTR
BSO150N03XT
SP000077687
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Rev. 1.6
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
0.1
10
36
34
32
30
28
26
24
22
20
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
125 °C
10
20
t
T
AV
j
60
[°C]
100 °C
[µs]
100
100
25 °C
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
4
=4.5 A pulsed
g s
8
Q
Q
gate
g
Q
12
sw
[nC]
Q
g d
16
6 V
BSO150N03
20
15 V
24 V
Q
g ate
2008-01-16
24