STS8DNF3LL STMicroelectronics, STS8DNF3LL Datasheet - Page 5

• Manufacturer Part Number: STS8DNF3LL
• Description: MOSFET 2N-CH 30V 8A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS8DNF3LL

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 8 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2470-2

STS8DNF3LL
Table 6.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
T
(see Figure 15)
SD
SD
j
= 150°C
Test conditions
= 8A, V
= 8A, V
GS
DD
= 0
= 15V
Electrical characteristics
Min.
Typ.
1.5
23
17
Max
1.2
32
8
Unit
nC
ns
A
A
V
A
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