FDMC8200 Fairchild Semiconductor, FDMC8200 Datasheet - Page 3

• Manufacturer Part Number: FDMC8200
• Description: MOSFET 2N-CH 30V 8A/12A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC8200

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A, 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 15V
• Power - Max: 700mW, 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 16 mOhms, 7.3 mOhms
• Forward Transconductance Gfs (max / Min): 29 S, 56 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 1.9 W, 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMC8200TR

FDMC8200 Rev.A1
©2009 Fairchild Semiconductor Corporation
Electrical Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
V
t
Q
rr
by the user's board design.
SD
rr
Symbol
θJA
is determined with the device mounted on a 1in
Source to Drain Diode Forward Volt-
age
Reverse Recovery Time
Reverse Recovery Charge
Parameter
c. 180 °C/W when mounted on a
a.65 °C/W when mounted on
T
2
a 1 in
minimum pad of 2 oz copper
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
2
pad of 2 oz copper
V
V
Q1
I
Q2
I
F
F
GS
GS
= 6 A, di/dt =
= 9 A, di/dt =
= 0 V, I
= 0 V, I
Test Conditions
S
S
3
= 6 A
= 9 A
100 A/μs
100 A/μs
(Note 2)
(Note 2)
θJC
Type
is guaranteed by design while R
Q1
Q2
Q1
Q2
Q1
Q2
d. 145 °C/W when mounted on a
b.55 °C/W when mounted on
minimum pad of 2 oz copper
a 1 in
Min
2
pad of 2 oz copper
Typ
0.8
0.8
2.3
5.6
13
21
θCA
www.fairchildsemi.com
Max
1.2
1.2
24
34
10
12
is determined
Units
nC
ns
V