FDMC8200 Fairchild Semiconductor, FDMC8200 Datasheet - Page 9

• Manufacturer Part Number: FDMC8200
• Description: MOSFET 2N-CH 30V 8A/12A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC8200

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A, 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 15V
• Power - Max: 700mW, 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 16 mOhms, 7.3 mOhms
• Forward Transconductance Gfs (max / Min): 29 S, 56 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 1.9 W, 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMC8200TR

FDMC8200 Rev.A1
©2009 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
0.001
0.01
0.1
2
1
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 23. Junction-to-Ambient Transient Thermal Response Curve
10
-3
SINGLE PULSE
R
θ
JA
= 145
o
C/W
10
-2
t, RECTANGULAR PULSE DURATION (sec)
10
-1
T
J
9
= 25 °C unless otherwise noted
1
NOTES:
DUTY FACTOR: D = t
PEAK T
J
10
= P
DM
x Z
P
θJA
DM
1
/t
x R
2
θJA
t
100
1
+ T
t
2
A
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