NTJD1155LT1G ON Semiconductor, NTJD1155LT1G Datasheet - Page 3

MOSFET N/P-CH 8V 1.3A SOT-363

NTJD1155LT1G

Manufacturer Part Number
NTJD1155LT1G
Description
MOSFET N/P-CH 8V 1.3A SOT-363
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTJD1155LT1G

Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
175 mOhm @ 1.2A, 4.5V
Drain To Source Voltage (vdss)
8V
Current - Continuous Drain (id) @ 25° C
1.3A
Vgs(th) (max) @ Id
1V @ 250µA
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.32 Ohm @ P Channel
Drain-source Breakdown Voltage
8 V @ P Channel
Gate-source Breakdown Voltage
8 V @ N Channel
Continuous Drain Current
+/- 1.3 A
Power Dissipation
400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
NTJD1155LT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTJD1155LT1G
Manufacturer:
ON
Quantity:
18 000
Part Number:
NTJD1155LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTJD1155LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NTJD1155LT1G
0
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.7
1.5
1.3
1.1
0.9
0.7
0
1.0
0
−50
Figure 4. On−Resistance vs. Input Voltage
Figure 6. Normalized On−Resistance Variation
I
V
L
ON/OFF
= 1 A
2.0
−25
0.5
Figure 2. V
T
= 1.5 to 8 V
J
, JUNCTION TEMPERATURE (°C)
3.0
0
1.0
TYPICAL PERFORMANCE CURVES
with Temperature
drop
25
V
4.0
I
IN
L
(AMPS)
(VOLTS)
vs. I
1.5
50
T
J
L
5.0
= 125°C
@ V
I
V
L
75
ON/OFF
2.0
= 1 A
V
T
in
in
J
6.0
= 25°C
= 5 V
= 2.5 V
V
in
100
= 1.5 to 8 V
T
= 1.8 V
T
J
2.5
J
= 125°C
= 25°C
7.0
http://onsemi.com
125
8.0
3.0
150
3
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.50
0.31
0.26
0.21
0.16
0.06
0.01
0.11
44
40
36
32
28
24
20
16
12
(T
−50
0
8
4
0
0
J
0
= 25°C unless otherwise noted)
I
V
Ci = 10 mF
Co = 1 mF
I
V
L
L
ON/OFF
ON/OFF
Figure 5. On−Resistance Variation with
= 1 A
−25
= 1 A
1
0.5
t
d(off)
Figure 3. V
T
= 1.5 V
J
= 1.5 to 8 V
, JUNCTION TEMPERATURE (°C)
Figure 7. Switching Variation
R2 @ V
0
2
1.0
25
Temperature
3
in
drop
I
L
= 4.5 V, R1 = 20 kW
R2 (kW)
(AMPS)
1.5
vs. I
50
4
T
J
= 125°C
L
V
in
@ V
75
5
= 1.8 V
t
2.0
T
d(on)
J
V
in
= 25°C
in
100
= 4.5 V
= 5 V
6
2.5
125
7
t
r
t
f
150
3.0
8

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