NDS7002A Fairchild Semiconductor, NDS7002A Datasheet - Page 4

• Manufacturer Part Number: NDS7002A
• Description: MOSFET N-CH 60V 280MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of NDS7002A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 280mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.28 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NDS7002ATR

Typical Electrical Characteristics
1.6
1.2
0.8
0.4
2
0
1 .5
0 .5
1.75
1.25
0.75
0
1.5
0.5
2
1
0
Figure 3. On-Resistance Variation
Figure 5. Transfer Characteristics
2
1
0
Figure 1. On-Region Characteristics
-5 0
V
DS
with Temperature
I
V
-2 5
= 10V
D
GS
= 500m A
2
1
= 10V
V
GS
V
0
T , JUNCTION T EMPERATURE (°C)
DS
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
V
GS
4
25
2
= 10V
T
50
J
= -55°C
6
9.0
3
7 5
2N7000 / 2N7002 / NDS7002A
8.0
7.0
1 0 0
25°C
8
4
6.0
5.0
1 2 5
1 2 5 ° C
4.0
3.0
1 5 0
10
5
1 .0 5
0 .9 5
0 .8 5
2 .5
1 .5
0 .5
1 .1
0 .9
0 .8
2 .5
1 .5
0 .5
3
2
1
0
Figure 4. On-Resistance Variation with Drain
Figure 6. Gate Threshold Variation with
Figure 2. On-Resistance Variation with Gate
1
3
2
1
-50
0
0
V
GS
Current and Temperature
Temperature
V
Voltage and Drain Current
=4.0V
-25
GS
= 10V
0 .4
0 .4
0
T , JUNCTION TEM PERATURE (°C)
4 .5
J
T = 1 2 5 ° C
J
I , DRAIN CURRENT (A)
I
D
D
5 .0
2 5
, DRA IN CURRENT (A)
0 .8
0 .8
2 5 ° C
5 0
-55°C
6 .0
1 .2
1 .2
7 5
1 0 0
I
V
D
7 .0
DS
1 .6
1 .6
= 1 m A
= V
2N7000.SAM Rev. A1
8 .0
1 2 5
GS
9 .0
1 0
1 5 0
2
2