NDS7002A Fairchild Semiconductor, NDS7002A Datasheet - Page 5

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NDS7002A

Manufacturer Part Number
NDS7002A
Description
MOSFET N-CH 60V 280MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS7002A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
280mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.28 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
NDS7002ATR

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Typical Electrical Characteristics
V
GS
6 0
4 0
2 0
1 0
5
2
1
1.075
1.025
0.975
0.925
Figure 11.
1
Figure 9. Capacitance Characteristics
1.05
0.95
Figure 7. Breakdown Voltage Variation
1.1
1
-50
I
R
D
with Temperature
GEN
f = 1 MHz
V
= 250µA
-25
2
GS
V
DS
= 0V
3
T , JUNCTION TEM PERATURE (°C)
, DRAIN TO SOURCE VOLTAGE (V)
0
J
V
IN
G
5
25
50
D
S
V
1 0
DD
75
R
2N7000 / 2N7002 /NDS7002A
L
DUT
100
2 0
(continued)
C iss
C oss
3 0
125
V
C rss
OUT
150
5 0
Figure 8. Body Diode Forward Voltage Variation with
Output, V out
Input, V in
0 .0 0 5
0 .0 0 1
1 0
Figure 12. Switching Waveforms
Figure 10. Gate Charge Characteristics
0 .0 5
0 .0 1
8
6
4
2
0
0 .5
0 .1
0
t
2
1
d(on)
0 .2
10%
V
V
I
D
T = 1 2 5 ° C
DS
GS
J
= 5 0 0 m A
0 .4
= 2 5 V
0 .4
V
= 0V
SD
t
50%
1 1 5 m A
on
10%
, BODY DIODE FORW A RD VOLTAGE (V)
Q
2 8 0 m A
t
0 .6
Pulse Width
90%
r
g
0 .8
, GATE CHARGE (nC)
2 5 ° C
0 .8
t
d(off)
1 .2
50%
-5 5 ° C
1
90%
t
10%
off
90%
1 .6
2N7000.SAM Rev. A1
1 .2
t
Inverted
f
1 .4
2

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