FDFMA2P859T Fairchild Semiconductor, FDFMA2P859T Datasheet - Page 3

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FDFMA2P859T

Manufacturer Part Number
FDFMA2P859T
Description
MOSFET P-CH 20V 3A MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDFMA2P859T

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
120 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.3V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
435pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDFMA2P859TTR
©2009 Fairchild Semiconductor Corporation
FDFMA2P859T Rev.B
Electrical Characteristics
Notes:
1: R
user's board design.
2: Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
(a) MOSFET R
(b) MOSFET R
(c) Schottky R
(d) Schottky R
TJA
is determined with the device mounted on a 1 in
TJA
TJA
TJA
TJA
= 86
= 140
= 86
= 173
o
o
C/W when mounted on a 1 in
o
C/W when mounted on a 1 in
o
C/W when mounted on a minimum pad of 2 oz copper.
C/W when mounted on a minimum pad of 2 oz copper.
a)86
mounted on a 1
in
copper.
2
pad of 2 oz
o
C/W when
T
2
2
A
2
oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB.
pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB.
= 25 °C unless otherwise noted
b)173
mounted
minimum pad of 2
oz copper.
o
C/W when
on
a
3
TJC
c)86
mounted on a 1
in
copper.
is guaranteed by design while R
2
pad of 2 oz
o
C/W when
TCA
is determined by the
www.fairchildsemi.com
d)140
mounted
minimum pad of 2
oz copper.
o
C/W when
on
a

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