FDFMA2P859T Fairchild Semiconductor, FDFMA2P859T Datasheet - Page 6

• Manufacturer Part Number: FDFMA2P859T
• Description: MOSFET P-CH 20V 3A MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMA2P859T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 435pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFMA2P859TTR

©2009 Fairchild Semiconductor Corporation
FDFMA2P859T Rev.B
Typical Characteristics
0.01
0.1
2
1
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction to Ambient Transient Thermal Response Curve
10
-3
T
J
= 25 °C unless otherwise noted
10
-2
SINGLE PULSE
R
T
JA
t, RECTANGULAR PULSE DURATION (sec)
= 173
o
C/W
10
-1
6
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
TJA
DM
1
/t
x R
2
TJA
100
t
1
+ T
t
2
A
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