FDMC6675BZ Fairchild Semiconductor, FDMC6675BZ Datasheet - Page 2

• Manufacturer Part Number: FDMC6675BZ
• Description: MOSFET P-CH 30V 9.5A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC6675BZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.4 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 2865pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0144 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 2300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMC6675BZTR

©2010 Fairchild Semiconductor Corporation
FDMC6675BZ Rev.D3
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
'BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
'V
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
SD
iss
oss
rss
'T
'T
g(TOT)
gs
gd
rr
Symbol
TJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 53 °C/W when mounted on
a 1 in
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
2
pad of 2 oz copper
I
I
V
V
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
V
V
V
V
I
D
D
D
F
DS
GS
GS
GS
GS
GS
GS
DD
DS
DD
GS
GS
GS
GS
GS
= -250 PA, V
= -250 PA, referenced to 25 °C
= -250 PA, referenced to 25 °C
= -9.5 A, di/dt = 100 A/Ps
= 0 V
= ±25 V, V
= -24 V,
= V
= -10 V, I
= -4.5 V, I
= -10 V, I
= -5 V, I
= -15 V, V
= 0 V to -10 V
= 0 V to -5 V
= -15 V, I
= -10 V, R
= 0 V, I
= 0 V, I
DS
Test Conditions
2
, I
S
S
D
D
D
= -9.5 A
= -1.6 A
D
D
D
GS
= -250 PA
= -9.5 A
GS
DS
GEN
= -9.5 A, T
= -9.5 A,
= -9.5 A
= -6.9 A
= 0 V,
= 0 V
= 0 V
= 6 :
V
I
T
D
DD
J
= -9.5 A
= 125 °C
= -15 V,
J
= 125 °C
(Note 2)
(Note 2)
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
TJC
is guaranteed by design while R
-1.0
Min
-30
2154
0.89
0.73
10.7
17.4
15.2
392
349
-1.9
Typ
6.4
24
15
28
10
44
26
46
26
13
20
-6
11
2865
14.4
27.0
20.5
525
525
Max
-100
-3.0
±10
1.3
1.2
38
27
TCA
20
20
71
42
65
37
-1
www.fairchildsemi.com
is determined by
mV/°C
mV/°C
Units
m:
pF
pF
pF
nC
nC
nC
nC
nC
ns
PA
PA
ns
ns
ns
ns
V
V
V
V
S