FDMC6675BZ Fairchild Semiconductor, FDMC6675BZ Datasheet - Page 5

• Manufacturer Part Number: FDMC6675BZ
• Description: MOSFET P-CH 30V 9.5A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC6675BZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.4 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 2865pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0144 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 2300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMC6675BZTR

©2010 Fairchild Semiconductor Corporation
FDMC6675BZ Rev.D3
Typical Characteristics
1000
0.001
100
0.01
0.3
10
0.1
10
1
2
1
10
-3
-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 14.
10
10
-2
Figure 13. Single Pulse Maximum
-2
T
Junction-to-Ambient Transient Thermal Response Curve
J
= 25 °C unless otherwise noted
V
GS
SINGLE PULSE
R
T
JA
= -10 V
= 125
10
10
-1
o
-1
t, RECTANGULAR PULSE DURATION (sec)
C/W
t, PULSE WIDTH (sec)
5
1
1
Power Dissipation
10
10
NOTES:
DUTY FACTOR: D = t
PEAK T
SINGLE PULSE
R
T
A
T
J
JA
= 25
= P
= 125
DM
o
C
x Z
o
C/W
P
TJA
100
DM
100
1
/t
x R
2
TJA
t
1
+ T
t
2
A
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1000
1000