FCA20N60F Fairchild Semiconductor, FCA20N60F Datasheet - Page 3

• Manufacturer Part Number: FCA20N60F
• Description: MOSFET N-CH 600V 20A TO-3PN
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCA20N60F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 3080pF @ 25V
• Power - Max: 208W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCA20N60F Rev. A1
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
10000
Figure 3. On-Resistance Variation vs.
10
10
10
9000
8000
7000
6000
5000
4000
3000
2000
1000
Figure 1. On-Region Characteristics
2
1
0
10
0.4
0.3
0.2
0.1
0.0
0
10
-1
Drain Current and Gate Voltage
Top :
Bottom :
0
-1
5
15.0 V
10.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
V
10
GS
15
V
C
V
DS
20
rss
C
C
DS
, Drain-Source Voltage [V]
iss
oss
, Drain-Source Voltage [V]
10
25
I
10
D
0
, Drain Current [A]
0
30
35
V
40
GS
= 10V
45
C
C
C
iss
oss
rss
* Notes :
50
= C
= C
= C
10
1. 250
2. T
10
1
* Note : T
gs
gd
ds
1
V
C
+ C
+ C
55
GS
= 25
μ
s Pulse Test
gd
= 20V
gd
* Notes :
(C
o
1. V
2. f = 1 MHz
C
J
60
ds
= 25
= shorted)
GS
= 0 V
o
C
65
70
3
10
10
10
10
10
10
12
10
8
6
4
2
0
2
1
0
2
1
0
0.2
0
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
2
Figure 6. Gate Charge Characteristics
10
Variation vs. Source Current
0.4
150
20
4
o
C
V
V
25
0.6
Q
GS
and Temperatue
SD
o
C
G
150
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
30
o
C
25
o
0.8
C
V
DS
V
DS
= 400V
40
6
V
= 250V
DS
= 100V
-55
1.0
o
C
50
* Note:
* Notes :
1.2
1. V
2. 250
1. V
2. 250
* Note : I
60
8
DS
GS
μ
= 40V
μ
s Pulse Test
= 0V
s Pulse Test
D
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1.4
= 20A
70
10
80
1.6