FCA20N60F Fairchild Semiconductor, FCA20N60F Datasheet - Page 4

• Manufacturer Part Number: FCA20N60F
• Description: MOSFET N-CH 600V 20A TO-3PN
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCA20N60F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 3080pF @ 25V
• Power - Max: 208W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCA20N60F Rev. A1
Typical Performance Characteristics
Figure 11. Transient Thermal Response Curve
Figure 9-1. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
10
-1
-2
2
1
0
10
1.2
1.1
1.0
0.9
0.8
-100
0
Operation in This Area
is Limited by R
* Notes :
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
o
-50
C
o
C
DS(on)
vs. Temperature
V
T
DS
J
10
, Drain-Source Voltage [V]
, Junction Temperature [
1
0
1 0
1 0
1 0
-1
-2
1 0
0
-5
0 .0 1
0 .0 2
0 .0 5
D = 0 .5
50
0 .2
0 .1
DC
1 0
10
100
10 ms
-4
2
o
s in g le p u ls e
t
C]
1 ms
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
* Notes :
100
1. V
2. I
D
GS
= 250
μ
150
s
= 0 V
1 0
μ
-3
A
(Continued)
200
10
3
1 0
-2
4
25
20
15
10
* N o te s :
P
5
0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
DM
-100
-1
θ
J M
JC
(t) = 0 .6
- T
C
= P
t
1
t
o
D M
2
-50
50
C /W M a x.
vs. Case Temperature
1 0
* Z
0
1
/t
θ
JC
2
vs. Temperature
(t)
T
T
C
J
, Junction Temperature [
, Case Temperature [
0
75
1 0
1
50
100
100
o
C]
o
C]
125
* Notes :
www.fairchildsemi.com
1. V
2. I
150
D
GS
= 20 A
= 10 V
150
200