PSMN2R2-40PS,127 NXP Semiconductors, PSMN2R2-40PS,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN2R2-40PS,127
• Description: MOSFET N-CH 40V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R2-40PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.1 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 8423pF @ 20V
• Power - Max: 306W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 306 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4898-5; 934063915127

NXP Semiconductors
PSMN2R2-40PS_2
Product data sheet
Fig 7.
Fig 9.
(S)
g
fs
(A)
250
200
150
100
250
200
150
100
I
D
50
50
0
0
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
0
0
1.5
50
100
175 °C
3
150
4.5
003aad123
003aad118
V
I
25 °C
D
GS
(A)
(V)
Rev. 02 — 28 September 2009
200
6
Fig 8.
Fig 10. Drain-source on-state resistance as a function
R
(mΩ)
DS(on)
12000
10000
(pf)
N-channel 40 V 2.1 mΩ standard level MOSFET
8000
6000
4000
2000
C
30
25
20
15
10
5
0
10
function of gate-source voltage; typical values
of gate-source voltage; typical values
Input and reverse transfer capacitances as a
0
-1
5
PSMN2R2-40PS
10
1
15
V
© NXP B.V. 2009. All rights reserved.
GS
V
003aad122
003aad124
(V)
GS
(V)
C
C
rss
iss
20
10
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