PSMN2R2-40PS,127 NXP Semiconductors, PSMN2R2-40PS,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN2R2-40PS,127
• Description: MOSFET N-CH 40V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R2-40PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.1 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 8423pF @ 20V
• Power - Max: 306W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 306 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4898-5; 934063915127

NXP Semiconductors
PSMN2R2-40PS_2
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
V
DS
50
= 10 V
100
100
(A)
I
V
80
60
40
20
S
0
DS
Q
0
= 20V
003aad120
G
(nC)
Rev. 02 — 28 September 2009
0.2
150
T
j
= 175 °C
0.4
Fig 16. Input, output and reverse transfer capacitances
0.6
12000
(pF)
N-channel 40 V 2.1 mΩ standard level MOSFET
C
8000
4000
0
10
as a function of drain-source voltage; typical
values
0.8
-1
003aad119
25 °C
V
sd
(V)
1
1
PSMN2R2-40PS
10
© NXP B.V. 2009. All rights reserved.
V
DS
003aad121
C
C
C
oss
(V)
rss
iss
10
2
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