STL50NH3LL STMicroelectronics, STL50NH3LL Datasheet - Page 3

• Manufacturer Part Number: STL50NH3LL
• Description: MOSFET N-CH 30V 27A PWRFLAT6X5
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL50NH3LL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 965pF @ 25V
• Power - Max: 4W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (6 x 5)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohms
• Forward Transconductance Gfs (max / Min): 32 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 27 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4114-2

STL50NH3LL
1
Electrical ratings
Table 2.
1. Continuous mode
2. Guaranteed for test time < 15ms
3. The value is rated according R
4. The value is rated according R
5. Pulse width limited by safe operating area
Table 3.
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec
Table 4.
R
Symbol
P
P
Symbol
R
Symbol
V
V
I
thj-pcb
I
TOT
TOT
DM
I
I
thj-case
V
T
GS
GS
D
D
D
E
T
I
DS
stg
AV
(3)
(4)
AS
(4)
J
(5)
(1)
(2)
(4)
(3)
(1)
Absolute maximum ratings
Thermal resistance
Avalanche data
Drain-source voltage (V
Gate-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Drain current (continuous) at T
Total dissipation at T
Total dissipation at T
Derating factor
Operating junction temperature
Storage temperature
Thermal resistance junction-case (Drain)
Thermal resistance junction-ambient
Not-repetitive avalanche current
Single pulse avalanche energy
(starting Tj=25°C, Id=Iav)
thj-c
thj-pcb
and is limited by wire bonding
C
C
Parameter
= 25°C
= 25°C
Parameter
Parameter
GS
= 0)
C
C
C
=100°C
= 25°C
= 25°C
-55 to 150
Value
Value
Value
± 16
± 18
0.03
2.08
31.3
108
8.1
150
30
27
13
60
7.5
4
Electrical ratings
W/°C
°C/W
°C/W
Unit
Unit
Unit
°C
mJ
W
W
V
V
V
A
A
A
A
A
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